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dc.contributor.authorBizindavyi, Jasper
dc.contributor.authorVerhulst, Anne S.
dc.contributor.authorSorée, Bart
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2018-10-22T07:17:16Z
dc.date.available2018-10-22T07:17:16Z
dc.date.issued2018-06-27
dc.identifier.citationJ. Bizindavyi, A. S. Verhulst, B. Sorée and G. Groeseneken, "Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs," 2018 76th Device Research Conference (DRC), Santa Barbara, CA, 2018, pp. 1-2. doi: 10.1109/DRC.2018.8442246en_US
dc.identifier.doihttps://doi.org/10.1109/DRC.2018.8442246
dc.identifier.urihttp://hdl.handle.net/2384/582823
dc.description.abstractThe tunnel field-effect transistor (TFET) is one of the prime steep-slope device candidates to be employed in future ultra-low power logic applications [1], [2], and can achieve sub-60 mV/dec subthreshold swings (SS) using quantum mechanical (QM) band-to-band tunneling (BTBT). One of the main challenges for TFETs is obtaining a sufficiently high drive-current ION [1]. The ION can be enhanced by introducing a highly-counter-doped pocket at the tunnel junction [3], [4]. However, it is well known that high doping concentrations introduce band-tails states in the bandgap [5]. First assessments on band-tails in TFETs, linked to diode measurements, have been made [6]–[8]. However, it is unknown whether the band-tails-induced tunneling contributions limit the performance of optimized pocketed TFETs. In this work, we investigate the impact of band-tails on the SS of p-n-i-n In0.53Ga0.47As and InAs TFETs for different pocket thicknesses and doping concentrations in the source and pocket, while using band-tails density-of-states (DOS) obtained from successful diode calibrations [8].en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectTFETsen_US
dc.subjectDopingen_US
dc.subjectTunnelingen_US
dc.subjectCalibrationen_US
dc.subjectIonsen_US
dc.subjectPhotonic band gapen_US
dc.titleImpact of calibrated band-tails on the subthreshold swing of pocketed TFETsen_US
dc.typeArticleen_US
dc.contributor.departmentimecen_US
dc.identifier.journal2018 76th Device Research Conference (DRC)en_US
dc.identifier.eid2-s2.0-85053183920
dc.identifier.scopusidSCOPUS_ID:85053183920


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