Progress in deep sub-micron scaling for logic and memory

Abstract

At the International Electron Devices Meeting in San Francisco imec's advanced CMOS research program reports promising advances in scaling logic, DRAM and non-volatile memory. A new device based on non-silicon channels was realized to scale high-performance logic towards the sub-20nm node. Moreover, imec developed low-leakage capacitors allowing DRAM to be pushed to the 2x nm node. And the switching mechanism of resistive RAM for next-generation flash memories (RRAM) has been unraveled.