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dc.contributor.authorMarent, Katrien
dc.date.accessioned2022-05-22T12:11:45Z
dc.date.available2022-05-22T12:11:45Z
dc.date.issued2010-12-07
dc.identifier.urihttp://hdl.handle.net/2384/583125
dc.description.abstractAt the International Electron Devices Meeting in San Francisco imec's advanced CMOS research program reports promising advances in scaling logic, DRAM and non-volatile memory. A new device based on non-silicon channels was realized to scale high-performance logic towards the sub-20nm node. Moreover, imec developed low-leakage capacitors allowing DRAM to be pushed to the 2x nm node. And the switching mechanism of resistive RAM for next-generation flash memories (RRAM) has been unraveled.en_US
dc.description.sponsorshipThese results were obtained in cooperation with imec's key partners in its core CMOS programs: Intel, Micron, Panasonic, Samsung, TSMC, Sony, Fujitsu, Infineon, Qualcomm, ST Microelectronic and Amkor.en_US
dc.publisherLeuvenIncen_US
dc.relation.urlhttps://www.leuveninc.com/event/36/32/Imec_reports_progress_in_deep_sub-micron_scaling_for_logic_and_memory/en_US
dc.titleProgress in deep sub-micron scaling for logic and memoryen_US
dc.typeMeetings and Proceedingsen_US
dc.contributor.departmentimecen_US
refterms.dateFOA2022-05-22T12:11:47Z


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